• 作者： 陳茂傑; 蔡毓琛; 雷添福
• 作者服務機構： 國立交通大學電子工程系及電子研究所
• 中文摘要： 本文探討磷處理法對於減少矽晶片和矽磊晶膜之缺陷以及改進PN接面特性之效應。本案處理法對於減少缺陷和改進砂晶品質之效應，分別使用萊特蝕刻（Wright etch）和陽極蝕刻（anodic etch）法予以觀察和測試。再者，晶片處理法對於PN接面漏電流、臨界電壓和崩潰電堅及其特性等亦分別加以探討。測試結果顯示，本案處理法對於減少缺陷、增進品質和改進PN接面特性等效果頗為顯著。磷處理法所需之磷原子濃度固然愈高愈佳，但是為配合一般半導體製程，以1000°C作1.5小時之POC1擴散，再加以適當之熱處理（以850°C施行1～2小時為佳），即可得顯著效果。
• 英文摘要： The effect of the phosphorus gettering scheme on the defects in the silicon wafer and on the pnjunction performance has been investigated. Wright etching and anodic etching techniques were employedto investigate the gettering effect of defect reduction. In addition, the influence on the pn junction leakage,threshold voltage and the breakdown characteristic by the gettering scheme were investigated. Promisingresults have been observed. POC1 diffusion at 1000°C for 1.5 hours has been found to be satisfactory forthe phosphorus gettering scheme.
• 中文關鍵字： phosphorus gettering on Si
• 英文關鍵字： --