• 作者： 邱煥凱; 李嗣涔
• 作者服務機構： 國立臺灣大學電機工程學系
• 中文摘要： 砷化鋁鎵／砷化鎵埋層異質結構雷射二極體已經成功的製造出來。製造埋層異質結構雷射的關鍵步驟在將樣本先蝕刻出一條狀高台，蝕刻深度必須達到基板，再利用經蝕刻的條狀兩側較易成長的特性，可成長埋層而將細微的帶狀活性層完全的埋入高帶溝的砷化鋁鎵裡。這種雷射於脈衝操作下，所獲得的最低起振電流僅25毫安培，而且在很高的注入電流下仍可保持單模操作。
• 英文摘要： The AlGaAs/GaAs buried heterostructure laser has been successfully fabricated. The key step torealize this type of laser was to mesa etch the epitaxial layers down to the (n)-GaAs substrate and make useof the high density of nucleation centers at the mesa-etched sides to grow the burying layers. After the·second step of LPE growth, the filamentary active region was completely buried by higher bandgap mate-rial. In pulse mode operation, the lowest threshold current achieved is only 25 mA and single mode opera-tion persists at high injection current.
• 中文關鍵字： AlGaAs; semiconductor lasers; buried heterostructure
• 英文關鍵字： --