- 作者: 張俊彥
- 作者服務機構: Professor Institute of Electronics National Chiao Tung University
- 中文摘要: The effect of intervalley carrier transPort on the current-voltage characteristicsof Au-n-type GaAs metal-semieonduetor barriers has been studied theoretically basedon the thermionic emission-diffusion theory incorporating the Ridley-Watkins-Hilsummechanism, by substituting the slope of imref to the electric field in the barrier. A negative differential resistance region is found to exist under reverse-biasedcondition over wide range of temperature and for dopings below 10 cm . Forhigher dopings the carrier transport is dominated by field emission. For a Schottky-type Au-GaAs diode with a doping of 1O cm , operated at 373 K, a differentialconduetance of -1.5 /cm is obtained at a reverse bias of 18V; and for a Mott-typediode with the same doping and an epitaxial layer thiekness of 2.4 m, a conductanceof -2 /cm is obtained at 18V. The average diffusion constant for two-valley system is derived. The resultshows considerable departure from the Einstein relation. A discussion is presentedconcerning the realization of the metal semiconductor system.
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